-
1 δ-doping layer
двовимірний легований шар, δ-легований шарEnglish-Ukrainian dictionary of microelectronics > δ-doping layer
-
2 layer
1. ім. шар; плівка 2. дієсл. наносити шар - accumulation layer
- amorphized layer
- anti-oxidation layer
- barrier layer
- base layer
- blanket layer
- blocking layer
- boundary layer
- branch layer
- buffer layer
- buried layer
- cap layer
- composite layer
- conducting layer
- conductor layer
- contact layer
- continuous layer
- depletion layer
- deposited layer
- diffused [diffusion] layer
- diffusion-impervious layer
- diffusion-source layer
- doped layer
- driving layer
- epitaxial layer
- epi layer
- etch-resistant layer
- evaporated layer
- evaporation layer
- field oxide layer
- Gaussian-doped layer
- heteroepitaxial layer
- high-concentration layer
- high-mobility layer
- homoepitaxial layer
- host layer
- implantation layer
- implanted layer
- impurity layer
- inert layer
- injection layer
- injector layer
- inset oxide layer
- insulating layer
- insulation layer
- insulator layer
- interconnection layer
- interface layer
- interfacial layer
- interlayer dielectric film layer
- intrinsic layer
- inversion layer
- ion-implantation layer
- lacquer layer
- lightly doped layer
- liquid-phase epitaxial layer
- low-mobility layer
- masking layer
- metallizationlayer
- metallayer
- metallized layer
- molecular epitaxy layer
- monoatomic layer
- monomolecular layer
- multiple layer
- multiple wiring layers
- n layer
- native layer
- nucleating layer
- ohmic layer
- organic passivation layer
- oxide-inhibiting layer
- p layer
- passivating layer
- passivation layer
- photosensitive layer
- planarizing layer
- polysilicon layer
- protective layer
- pyrolytically deposited layer
- registered layers
- resistive layer
- sacrificial layer
- sandwiched layers
- sealing layer
- seal layer
- separation layer
- signal layer
- source layer
- space-charge layer
- stepped layers
- stopping layer
- substrate layer
- superconductive layer
- superimposed layers
- superlattice layer
- supported semiconductor layer
- thermal-охide layer
- transition layer
- vacuum-deposited layer
- vacuum-evaporated layer
- via layer
- wiring layer
- wiring channel layer
- δ-doping layer -
3 doping
легування. Технологія модифікації матеріалу додаванням домішки. - atomic layer doping
- background doping
- control doping
- counter doping
- double doping
- droplet-migration doping
- erratic doping
- field охide doping
- heavy [high] doping
- implantation doping
- implant doping
- injection doping
- interstitial doping
- ion-implantationdoping
- ion-implantdoping
- ion-shower doping
- laser doping
- lifetime-killer doping
- localized doping
- low-concentration doping
- low doping
- modulation doping
- neutron-transmutationdoping
- neutrondoping
- photochemical doping
- plasma doping
- post-охidation doping
- preferential doping
- proximity doping
- sheet doping
- shower doping
- solute doping
- substitutional doping
- transmutation doping -
4 atomic layer doping
легування в одному атомному моношаріEnglish-Ukrainian dictionary of microelectronics > atomic layer doping
-
5 technique
1) метод, спосіб (див. т-ж арproach, method) 2) технологія (див. т-ж technology) - alloying technique
- annular sawing technique
- assembly technique
- automatic layout technique
- automatic test generation technique
- BIMOS technique
- bond etchback technique
- boron etch stop technique
- bump-metallization technique
- CAD technique
- GDI technique
- chip floorplan technique
- chip processing technique
- circuit technique
- CMOS technique
- cold-crucible technique
- cold-processing technique
- collector-diffusion isolation technique
- commutating auto-zeroing technique
- computerized design technique
- CVD technique
- decomposition technique
- definition technique
- development advanced rate technique
- diffused planar technique
- diffusion technique
- double-diffusion technique
- dry processing technique
- electrochemical passivation technique
- electron-beam technique
- electroplating technique
- etch-and-refill technique
- etchback technique
- etch-stop technique
- evaporation technique
- fabrication technique
- film technique
- flip-chip technique
- floating crucible technique
- folding technique
- four-point probe technique
- growth technique
- implant-isolation technique
- incremental time technique
- integrated technique
- interconnection technique
- internal trace technique
- ion-implantation technique
- isolation technique
- laser selective photoionisation technique
- laser-trimming technique
- lifting technique
- lift-off technique
- light-scattering technique
- liquid encapsulation Czochralski technique
- liquid-phase epitaxy technique
- liquid epitaxy technique
- lithographic technique
- masked diffusion technique
- masking technique
- mask-making technique
- masterslice technique
- mesa-fabrication technique
- Minimod technique
- mixed-level technique
- mixed-mode technique
- modified horizontal Bridgman technique
- modified Bridgman technique
- molecular-beam epitaxy technique
- monolithic technique
- mounting technique
- multichip assembly technique
- multiwire technique
- native охide technique
- node tearing technique
- n-type doping technique
- open-tube diffusion technique
- open-tube technique
- optical alignment technique
- oxide masking technique
- oxygen-plasma охidation technique
- packaging technique
- peripheral sawing technique
- photolithographic technique
- photomasking technique
- photomechanical technique
- photoresist lift-off technique
- piecewise linear modeling technique
- planar-epitaxial technique
- plasma-охidation technique
- plasma-spraying technique
- p-n junction isolation technique
- positive photoresist masking technique
- probe technique
- processing technique
- production technique
- production soldering technique
- reduction technique
- resist technique
- SBC technique
- scaling technique
- screen-printing technique
- screen-stencil technique
- self-aligned double-diffusion technique
- serial-writing technique
- shallow V-groove technique
- shrinking technique
- silk-screeningtechnique
- silk-screentechnique
- single-layer interconnection technique
- single-level interconnection technique
- sinking technique
- slice technique
- solder reflow technique
- solute-diffusion technique
- SOS isolation technique
- sparse matrix technique
- staged-diffusion technique
- staining technique
- stencil technique
- step-and-repeat reduction technique
- tape-carrier technique
- test technique
- thermal wave technique
- trench-etch technique
- tri-mask technique
- trimming technique
- two-layer resist technique
- two-phase technique
- two-step technique
- vapor-oxidation technique
- vapor-phase epitaxial technique
- V-ATC technique
- wet technique
- wire-bonding technique
- wire-wrapping technique
- wire-wrap technique
- wiring technique
- 1:1 photomasking techniqueEnglish-Ukrainian dictionary of microelectronics > technique
-
6 structure
1. ім. структура; конструкція 2. дієсл. формувати структуру - array structure
- band structure
- basic structure
- bilevel structure
- bipolar structure
- bridge structure
- charge-coupled device structure
- charge-coupled structure
- charge-transfer device structure
- charge-transfer structure
- chip structure
- CMOS structure
- contiguous-disk propagating structure
- data structure
- delta-type doping structure
- disordered structure
- double-barrier parabolic well structure
- double-implanted structure
- functional structure
- gate structure
- graded structure
- heterogeneous structure
- heterojunction structure
- homogeneous structure
- implanted structure
- insulated substrate structure
- integrated circuit structure
- integrated structure
- interconnection structure
- interdigital collector structure
- interface structure
- isolation-moat structure
- Josephson-effect structure
- junction-isolated structure
- latchup resistant structure
- lateral structure
- lateral transistor structure
- lattice structure
- lattice-strained structure
- lead structure
- logic structure
- MAS structure
- mask structure
- merged structure
- mesa -type structure
- mesa structure
- MIM structure
- MIS structure
- MNOS structure
- monolithic-typestructure
- monolithicstructure
- MOS structure
- MSM structure
- MTOS structure
- multigate structure
- multilayer structure
- multilevel structure
- nonhomogeneous-base structure
- n-p-n structure
- nonresonant surface реriodical structure
- oxide-isolated structure
- pin structure
- planar structure
- planar superlattice structure
- p-n-p structure
- polycrystalline resistor structure
- propagating structure
- quantum-box structure
- quantum well structure
- quasi-one dimensional structure
- recessed structure
- regular crystal structure
- self-aligned gate structure
- self-registered gate structure
- semiconductor structure
- semi-ROX structure
- series-gated structure
- shallow chip structure
- shield structure
- short-channel device structure
- short-channel structure
- SIC structure
- silicide-on-polysilicon structure
- silicon-in-sapphire structure
- silicon-on- insulator structure
- silicon- insulator structure
- silicon-on-sapphire structure
- silicon-on-spinel structure
- silicon-over oxide-semiconductor structure
- single-crystal structure
- slow-wave structure
- sphalerite-type structure
- submicrometer structure
- superlattice structure
- surface periodical structure
- test structure
- tiered structure
- totally ordered structure
- trench structure
- trench-gate structure
- trench isolation structure
- triple-diffusion structure
- triple-poly structure
- twin-well structure
- ultra-small structure
- unipolar structure
- van der Pauw structure
- vertical injector structure
- vertically integrated structure
- V-groove structure
- wafer асceptance test structure
- wiring layer structure
- zinc blende structureEnglish-Ukrainian dictionary of microelectronics > structure
-
7 superlattice
надгратка - doping-modulated superlattice
- lateral superlattice
- metal-insulator superlattice
- modulation superlattice
- N-layered superlattice
- planar superlattice
- quantum wire superlattice
- semiconductor superlattice
- short реriod superlattice
- silicon-germanium superlattice
- strained layer superlatticeEnglish-Ukrainian dictionary of microelectronics > superlattice
См. также в других словарях:
Monolayer doping — (MLD) is a well controlled, wafer scale surface doping technique first developed at the University of California, Berkeley, in 2007.[1] This work is aimed for attaining controlled doping of semiconductor materials with atomic accuracy, especially … Wikipedia
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
Power MOSFET — A Power MOSFET is a specific type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed to handle large power. Compared to the other power semiconductor devices (IGBT, Thyristor...), its main advantages are high commutation speed … Wikipedia
Memristor — Type Passive Working principle Memristance Invented Leon Chua (1971) First production HP Labs (2008) Electronic symbol … Wikipedia
Threshold voltage — The threshold voltage of a MOSFET is usually defined as the gate voltage where an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. The creation of this layer is described next … Wikipedia
Multijunction photovoltaic cell — Multi junction solar cells or tandem cells are solar cells containing several p n junctions. Each junction is tuned to a different wavelength of light, reducing one of the largest inherent sources of losses, and thereby increasing efficiency.… … Wikipedia
Optical fiber — A bundle of optical fibers A TOSLINK fiber optic audio c … Wikipedia
Chemical beam epitaxy — (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular… … Wikipedia
Ohmic contact — An ohmic contact is a region on a semiconductor device that has been prepared so that the current voltage (I V) curve of the device is linear and symmetric. If the I V characteristic is non linear and asymmetric, the contact is not ohmic, but is… … Wikipedia
Epitaxy — refers to the method of depositing a monocrystalline film on a monocrystalline substrate. The deposited film is denoted as epitaxial film or epitaxial layer. The term epitaxy comes from a Greek root ( epi above and taxis in ordered manner ) which … Wikipedia
Zinc oxide — Other names Zinc white Calamine Identifiers … Wikipedia